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15GN03CA-TB-E
Descripción:
15GN03CA-TB-E datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
15GN03CA-TB-E
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
15GN03CA-TB-E More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.44
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
13 dB
Polarity:
NPN
Case/Package:
TO-236-3
Transition Frequency:
1.5 GHz
Max Power Dissipation:
200 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
10 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
9411 In Stock
Applications:
Tablets
Building automation
Datacom module
hFE Min:
100
Packaging:
Tape & Reel (TR)
Number of Pins:
3
Max Collector Current:
70 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
3 V
Collector Emitter Voltage (VCEO):
10 V
Número de modelo:
Se aplicarán los siguientes requisitos:
Introducción
15GN03CA-TB-E Overview\\\\n15GN03CA-TB-E is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 15GN03CA-TB-E high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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