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NE58219-T1-A
fabricante:
Semiconductor de diálogo
Descripción:
NE58219-T1-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Dialog Semiconductor stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
NE58219-T1-A
Manufacturer:
Dialog Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
NE58219-T1-A More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.80
Remark:
Manufacturer: Dialog Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
NPN
Packaging:
Cut Tape (CT)
Max Frequency:
5 GHz
Power Dissipation:
100 mW
Transition Frequency:
5 GHz
Max Breakdown Voltage:
12 V
Max Power Dissipation:
100 mW
Min Operating Temperature:
-55 °C
Continuous Collector Current:
60 mA
Collector Emitter Voltage (VCEO):
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
3215 In Stock
Applications:
Datacom module
Grid infrastructure
Tablets
hFE Min:
120
Frequency:
5 GHz
Output Power:
100 mW
Number of Pins:
3
Number of Elements:
1
Element Configuration:
Single
Max Collector Current:
60 mA
Max Operating Temperature:
125 °C
Emitter Base Voltage (VEBO):
3 V
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
12 V
Número de modelo:
Se aplicará el procedimiento siguiente:
Introducción
NE58219-T1-A Overview\\nNE58219-T1-A is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NE58219-T1-A high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. NE58219-T1
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