NE662M04-T2-A
Especificaciones
Part Number:
NE662M04-T2-A
Manufacturer:
Dialog Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
NE662M04-T2-A More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.00
Remark:
Manufacturer: Dialog Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
18 dB
Width:
1.25 mm
Length:
2 mm
Frequency:
2 GHz
Output Power:
115 mW
Number of Pins:
4
Number of Elements:
1
Max Breakdown Voltage:
3.3 V
Max Power Dissipation:
115 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1.5 V
Collector Base Voltage (VCBO):
15 V
Collector Emitter Breakdown Voltage:
3.3 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
3445 In Stock
Applications:
Hybrid, electric & powertrain systems
Building automation
Connected peripherals & printers
Mount:
Surface Mount
Height:
590 µm
Polarity:
NPN
Case/Package:
SOT-343
Max Frequency:
25 GHz
Power Dissipation:
115 mW
Transition Frequency:
25 GHz
Max Collector Current:
35 mA
Gain Bandwidth Product:
25 GHz
Min Operating Temperature:
-65 °C
Continuous Collector Current:
35 mA
Collector Emitter Voltage (VCEO):
3.3 V
Número de modelo:
NE662M04-T2-A
Introducción
NE662M04-T2-A Overview\\nNE662M04-T2-A is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NE662M04-T2-A high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. NE662M04
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