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BF888H6327XTSA1
Descripción:
BF888H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IR (Infineon Technologies) stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
BF888H6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BF888H6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.20
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Frequency:
47 GHz
Contact Plating:
Tin
Number of Elements:
1
Max Power Dissipation:
160 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
13 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
5081 In Stock
Applications:
Portable electronics
Wireless infrastructure
Hybrid, electric & powertrain systems
Polarity:
NPN
Case/Package:
SOT-343
Power Dissipation:
160 mW
Max Collector Current:
30 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1.2 V
Collector Emitter Voltage (VCEO):
4 V
Número de modelo:
Se aplicará a los vehículos de las categorías M1 y M2
Introducción
BF888H6327XTSA1 Overview\\\\nBF888H6327XTSA1 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BF888H6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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