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BLA1011S-200,112
Descripción:
BLA1011S-200,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Rochester Electronics stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
BLA1011S-200,112
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BLA1011S-200,112 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$353.14
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
13 dB
Fall Time:
50 ns
Rise Time:
50 ns
Test Current:
150 mA
Max Frequency:
1.09 GHz
Voltage Rating:
75 V
Power Dissipation:
700 W
Element Configuration:
Single
Max Operating Temperature:
200 °C
Drain to Source Resistance:
60 mΩ
Drain to Source Voltage (Vdss):
75 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
90 In Stock
Applications:
Body electronics & lighting
Data center & enterprise computing
Grid infrastructure
Mount:
Surface Mount
Frequency:
1.09 GHz
Output Power:
200 W
Test Voltage:
36 V
Number of Pins:
3
Max Output Power:
250 W
Number of Elements:
1
Max Power Dissipation:
700 W
Min Operating Temperature:
-65 °C
Gate to Source Voltage (Vgs):
5 V
Drain to Source Breakdown Voltage:
75 V
Número de modelo:
BLA1011S-200,112
Introducción
BLA1011S-200,112 Overview\\\\nBLA1011S-200,112 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLA1011S-200,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensivel
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