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2SA1242-Y(Q)
Descripción:
2SA1242-Y(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
2SA1242-Y(Q)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
2SA1242-Y(Q) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
PNP
Transition Frequency:
170 MHz
Max Collector Current:
5 A
Gain Bandwidth Product:
170 MHz
Emitter Base Voltage (VEBO):
8 V
Collector Emitter Voltage (VCEO):
1 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty:
137 In Stock
Applications:
Infotainment & cluster
Building automation
Enterprise projectors
hFE Min:
160
Case/Package:
TO-252-3
Element Configuration:
Single
Max Power Dissipation:
1 W
Max Operating Temperature:
150 °C
Collector Base Voltage (VCBO):
35 V
Collector Emitter Breakdown Voltage:
20 V
Número de modelo:
2SA1242-Y(Q)
Introducción
2SA1242-Y(Q) Overview\\n2SA1242-Y(Q) is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SA1242-Y(Q) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. 2SA1242
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