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SSM6L16FETE85LF
Descripción:
SSM6L16FETE85LF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
SSM6L16FETE85LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SSM6L16FETE85LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.37
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rds On Max:
3 Ω
Case/Package:
SOT-563-6
Input Capacitance:
9.3 pF
Number of Channels:
2
Turn-On Delay Time:
130 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
18 Ω
Continuous Drain Current (ID):
100 mA
Drain to Source Breakdown Voltage:
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
7929 In Stock
Applications:
Hybrid, electric & powertrain systems
Packaging:
Cut Tape (CT)
Nominal Vgs:
1.1 V
Number of Pins:
6
Power Dissipation:
150 mW
Number of Elements:
2
Turn-Off Delay Time:
190 ns
Max Power Dissipation:
150 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
10 V
Drain to Source Voltage (Vdss):
20 V
Número de modelo:
Se trata de un sistema de control de las emisiones de gases de escape.
Introducción
SSM6L16FETE85LF Overview\\\\nSSM6L16FETE85LF is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SSM6L16FETE85LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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