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IPG20N06S4L26ATMA1

Descripción:
IPG20N06S4L26ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
IPG20N06S4L26ATMA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IPG20N06S4L26ATMA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.06
Remark:
Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Mount:
Surface Mount
Fall Time:
10 ns
Rise Time:
1.5 ns
Schedule B:
8541290080
Package Quantity:
5000
Power Dissipation:
33 W
Turn-On Delay Time:
5 ns
Turn-Off Delay Time:
18 ns
Max Dual Supply Voltage:
60 V
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
16 V
Max Junction Temperature (Tj):
175 °C
Drain to Source Breakdown Voltage:
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
4481 In Stock
Applications:
Enterprise projectors Wearables (non-medical) Power delivery
Height:
1 mm
Packaging:
Digi-Reel®
Rds On Max:
26 mΩ
Number of Pins:
8
Input Capacitance:
1.43 nF
Number of Channels:
2
On-State Resistance:
26 mΩ
Max Power Dissipation:
33 W
Max Operating Temperature:
175 °C
Drain to Source Resistance:
21 mΩ
Continuous Drain Current (ID):
20 A
Drain to Source Voltage (Vdss):
60 V
Número de modelo:
IPG20N06S4L26ATMA1
Introducción
IPG20N06S4L26ATMA1 Overview\\\\nIPG20N06S4L26ATMA1 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPG20N06S4L26ATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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