english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
H7N1002LS-E
Descripción:
H7N1002LS-E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Integrated Device Technology (Renesas Electronics America) stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
H7N1002LS-E
Manufacturer:
Integrated Device Technology (Renesas Electronics America)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
H7N1002LS-E More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Integrated Device Technology (Renesas Electronics America).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Case/Package:
SC
Input Capacitance:
9.7 nF
Number of Elements:
1
Max Operating Temperature:
150 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
100 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
568 In Stock
Applications:
Infotainment & cluster
Motor drives
Gaming
Rds On Max:
10 mΩ
Number of Pins:
3
Power Dissipation:
100 W
Max Power Dissipation:
100 W
Min Operating Temperature:
-55 °C
Continuous Drain Current (ID):
75 A
Número de modelo:
Se aplicarán los siguientes requisitos:
Introducción
H7N1002LS-E Overview\\nH7N1002LS-E is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have H7N1002LS-E high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. H7N1002LS
Envíe el RFQ
Común:
MOQ: