english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
IXTU1R4N60P
Descripción:
IXTU1R4N60P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Wickmann / Littelfuse stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
IXTU1R4N60P
Manufacturer:
Wickmann / Littelfuse
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IXTU1R4N60P More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Wickmann / Littelfuse.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Rise Time:
16 ns
Case/Package:
TO-251
Power Dissipation:
50 W
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
9 Ω
Continuous Drain Current (ID):
1.4 A
Drain to Source Breakdown Voltage:
600 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
652 In Stock
Applications:
Hybrid, electric & powertrain systems
Building automation
Wearables (non-medical)
Fall Time:
16 ns
Rds On Max:
9 Ω
Input Capacitance:
140 pF
Turn-Off Delay Time:
25 ns
Max Power Dissipation:
50 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
30 V
Drain to Source Voltage (Vdss):
600 V
Número de modelo:
El número de unidades de producción es:
Introducción
IXTU1R4N60P Overview\\nIXTU1R4N60P is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IXTU1R4N60P high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. IXTU1R4N60
Envíe el RFQ
Común:
MOQ: