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NP109N055PUJ-E1B-AY
Descripción:
NP109N055PUJ-E1B-AY datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Integrated Device Technology (Renesas Electronics America) stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
NP109N055PUJ-E1B-AY
Manufacturer:
Integrated Device Technology (Renesas Electronics America)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NP109N055PUJ-E1B-AY More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Integrated Device Technology (Renesas Electronics America).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rise Time:
20 ns
Case/Package:
TO-263
Power Dissipation:
1.8 W
Turn-On Delay Time:
40 ns
Max Power Dissipation:
1.8 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
55 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
407 In Stock
Applications:
Aerospace & defense
Pro audio, video & signage
Connected peripherals & printers
Fall Time:
10 ns
Rds On Max:
3.2 mΩ
Input Capacitance:
10.35 nF
Number of Elements:
1
Turn-Off Delay Time:
90 ns
Max Operating Temperature:
175 °C
Drain to Source Resistance:
3.2 MΩ
Continuous Drain Current (ID):
110 A
Número de modelo:
Se aplicará el método de evaluación de los riesgos.
Introducción
NP109N055PUJ-E1B-AY Overview\\nNP109N055PUJ-E1B-AY is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NP109N055PUJ-E1B-AY high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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