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SI1305DL-T1-E3
Descripción:
SI1305DL-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
SI1305DL-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI1305DL-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rise Time:
55 ns
Resistance:
280 mΩ
Case/Package:
SC
Power Dissipation:
340 mW
Number of Elements:
1
Turn-Off Delay Time:
17 ns
Max Power Dissipation:
290 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
8 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
44 In Stock
Applications:
Infotainment & cluster
Industrial transport (non-car & non-light truck)
Enterprise machine
Fall Time:
55 ns
Rds On Max:
280 mΩ
Nominal Vgs:
-450 mV
Number of Pins:
3
Threshold Voltage:
-450 mV
Turn-On Delay Time:
8 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
530 mΩ
Continuous Drain Current (ID):
860 mA
Drain to Source Breakdown Voltage:
-8 V
Número de modelo:
Si el valor de las emisiones de CO2 es superior a 0,01%, el valor de las emisiones de CO2 será igual
Introducción
SI1305DL-T1-E3 Overview\\nSI1305DL-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI1305DL-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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