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SI7123DN-T1-GE3
Descripción:
SI7123DN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Categoría:
Semiconductor discreto
Especificaciones
Part Number:
SI7123DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI7123DN-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.04 mm
Fall Time:
88 ns
Rds On Max:
10.6 mΩ
Number of Pins:
8
Input Capacitance:
3.729 nF
Threshold Voltage:
-1 V
Number of Elements:
1
Turn-Off Delay Time:
82 ns
Max Operating Temperature:
150 °C
Drain to Source Resistance:
8.6 mΩ
Continuous Drain Current (ID):
16 A
Drain to Source Breakdown Voltage:
-20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
69 In Stock
Applications:
Wireless infrastructure
Power delivery
Home theater & entertainment
Width:
3.3 mm
Length:
3.3 mm
Rise Time:
88 ns
Resistance:
10.6 mΩ
Contact Plating:
Tin
Power Dissipation:
1.5 W
Number of Channels:
1
Turn-On Delay Time:
25 ns
Max Power Dissipation:
1.5 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
20 V
Número de modelo:
Si el número de unidades de producción es inferior al número de unidades de producción, el número de
Introducción
SI7123DN-T1-GE3 Overview\\nSI7123DN-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI7123DN-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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